? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 600 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 600 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c10a i dm t c = 25 c, pulse width limited by t jm 25 a i ar t c = 25 c10a e ar t c = 25 c18mj e as t c = 25 c 500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g g = gate d = drain s = source tab = drain ds99424(09/05) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 1 ma 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c 150 a r ds(on) v gs = 10 v, i d = 0.5 i d25 740 m ? pulse test, t 300 s, duty cycle d 2 % polarhv tm hiperfet power mosfet advance technical information features z international standard packages z fast intrinsic diode z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (ixfa) to-220 (ixfp) d (tab) g s g s (tab) ixfa 10n60p ixfp 10n60p v dss = 600 v i d25 = 10 a r ds(on) 740 m ? ? ? ? ? trr 250 ns n-channel enhancement mode avalanche rated fast intrinsic diode
ixys reserves the right to change limits, test conditions, and dimensions. ixfa 10n60p ixfp 10n60p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 5 11 s c iss 1610 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 165 pf c rss 14 pf t d(on) 23 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 27 ns t d(off) r g = 10 ? (external) 65 ns t f 21 ns q g(on) 34 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 12 nc q gd 11 nc r thjc 0.62 k/w r thck (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 10 a i sm repetitive 25 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 10 a, -di/dt = 100 a/ s, v gs =0v, v r =100v 250 ns q rm 0.32 c t rr 3a pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixfp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixfa) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2005 ixys all rights reserved ixfa 10n60p ixfp 10n60p fig. 2. extended output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 3. output characteristics @ 125 o c 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 1. output characteristics @ 25 o c 0 1 2 3 4 5 6 7 8 9 10 01234567 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 10a i d = 5a v gs = 10v fig. 6. drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 i d - amperes r d s ( o n ) - normalize d t j = 125 c t j = 25 c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfa 10n60p ixfp 10n60p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 q g - nanocoulombs v g s - volts v ds = 300v i d = 5a i g = 10ma fig. 7. input admittance 0 2 4 6 8 10 12 14 16 3.5 4 4.5 5 5.5 6 6.5 v g s - volts i d - amperes t j =125 c 25 c -40 c fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 20 02468101214 i d - amperes g f s - siemens t j = -40 c 25 c 125 c fig. 9. source current vs. source-to-drain voltage 0 5 10 15 20 25 30 35 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. maxim um transient therm al resistance 0.01 0.10 1.00 0.01 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - c / w
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